Removal of CrN Contamination from EUV Mask Backside Using Dry Cleaning

Hyun Tae Kim; Nagendra Prasad Yerriboina; Hee Jin Song; Jin Goo Park

doi:10.4028/www.scientific.net/SSP.282.59

Paper Titles

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Nanoscale Etching of GaAs and InP in Acidic H₂O₂ Solution: A Striking Contrast in Kinetics and Surface Chemistry
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Ion Implanted Photoresist Removal by Material Loss-Free Organic Solvent
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Removal of CrN Contamination from EUV Mask Backside Using Dry Cleaning
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Damage-Free Cleaning of Advanced Structure Using Timely Energized Bubble Oscillation Megasonic Technology
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An Observation Method of Real Contact Area during PVA Brush Scrubbing
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Electrostatic Discharge Control and Visualization in Spray Nozzle
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Behavior Analysis of Si Etching Process with HF/HNO₃ Mixture in Single-Spin Wafer Process
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Removal of CrN Contamination from EUV Mask Backside Using Dry Cleaning

Abstract:

For EUV lithography, a reflective mask is essential because of use of the strong energy, wavelength of 13.5 nm. The EUV mask consists of multi-layered, multi-material structure and is susceptible to various contaminants. Since EUV lithography process should be used in a high vacuum environment, an electrostatic chuck (ESC) is used to fix or hold the EUV mask using electrostatic force. In general, in order to use ESC chuck, it needs a thin conductive layer (CrN layer) on the backside. However, the contact points of the electrostatic pin chuck can make exfoliation of conductive CrN layer producing CrN particles. If these particles are present on the backside of the mask, CD or DOF may be affected during EUV exposure. The 1 μm particle can leads to a gap radius of 42mm [4]. Moreover, these backside particles may travel to the front side. Therefore, backside cleaning should be performed to remove particles from the mask backside surface.