Toward the Surface Preparation of InGaAs for the Future CMOS Integration

Sang Woo Lim

doi:10.4028/www.scientific.net/SSP.282.39

Paper Titles

Surface Recombination Velocity Imaging of HF-Etched Si Wafers Using Dynamic Heterodyne Lock-In Carrierography
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Organic Material Removal by Thermally Activated Ozone Gas
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Carbon Removal and Native Oxide Cleaning on Si and SiGe Surfaces in Previum Chamber
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Vapor-Phase Deposition of N₃-Containing Monolayers on SiO₂ and Si₃N₄ for Wafer Scale Biofunctionalization
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Toward the Surface Preparation of InGaAs for the Future CMOS Integration
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Effect of WET treatment on Group III-V Compound Semiconductor Surface
p.43

Nanoscale Etching of GaAs and InP in Acidic H₂O₂ Solution: A Striking Contrast in Kinetics and Surface Chemistry
p.48

Ion Implanted Photoresist Removal by Material Loss-Free Organic Solvent
p.52

Removal of CrN Contamination from EUV Mask Backside Using Dry Cleaning
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HomeSolid State PhenomenaSolid State Phenomena Vol. 282Toward the Surface Preparation of InGaAs for the...

Toward the Surface Preparation of InGaAs for the Future CMOS Integration

Abstract:

The integration of III-V and Ge materials on Si surface causes many issues with complexity such as lattice mismatch with silicon. In particular, the surface preparation and passivation of InGaAs is very challenging, because the formation of InGaAs/high-K interface is important, but not well understood. For the systematical study of InGaAs surface during wet processes, the effect of various wet etching processes on the surfaces of binary III-V compound semiconductors (GaAs, InAs, GaSb and InSb) was studied from the viewpoints of surface oxidation, material loss (dissolution), and passivation. Based on that, further effort to understand the surface reactions on ternary InGaAs compound semiconductor was made. In addition, process sequential effect on the InGaAs surface was investigated.

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Periodical:

Solid State Phenomena (Volume 282)

Pages:

39-42

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.282.39

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Online since:

August 2018

Authors:

Sang Woo Lim*

Keywords:

Etching, III-V Semiconductor, InGaAs, Oxidation, Surface Preparation

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References

[1] D. Seo, J. Na, S. Lee, and S. Lim, Behavior of GaSb (100) and InSb (100) surfaces in the presence of H2O2 in acidic and basic cleaning solutions,, Applied Surface Science 399 (2017), 523-534.

DOI: 10.1016/j.apsusc.2016.12.114

Google Scholar

[2] D. Seo, S. Lee and S. Lim, Behavior of GaSb (100) Surface in the Presence of H2O2 in Wet-Etching Solutions,, Journal of Physical Chemistry C 119 (2015), 24774-24780.

DOI: 10.1021/acs.jpcc.5b04250

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[3] J. Na, S. Lee and S. Lim, Oxidation and etching behaviors of the InAs surface in various acidic and basic chemical solutions,, Surface Science 658 (2017), 22-30.

DOI: 10.1016/j.susc.2017.01.002

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[4] J. Na and S. Lim, Elemental behaviors of the InGaAs surface after treatment in aqueous solutions,, Applied Surface Science (submitted).

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