Carbon Removal and Native Oxide Cleaning on Si and SiGe Surfaces in Previum Chamber

Fei Wang; Bubesh Jotheeswaran; John Tolle; Xing Lin; Pei Pei Gao; Alex Demos

doi:10.4028/www.scientific.net/SSP.282.25

Paper Titles

Preface

Industry Context for Semiconductor Wet Etch and Surface Preparation
p.3

Surface Recombination Velocity Imaging of HF-Etched Si Wafers Using Dynamic Heterodyne Lock-In Carrierography
p.13

Organic Material Removal by Thermally Activated Ozone Gas
p.19

Carbon Removal and Native Oxide Cleaning on Si and SiGe Surfaces in Previum Chamber
p.25

Vapor-Phase Deposition of N₃-Containing Monolayers on SiO₂ and Si₃N₄ for Wafer Scale Biofunctionalization
p.31

Toward the Surface Preparation of InGaAs for the Future CMOS Integration
p.39

Effect of WET treatment on Group III-V Compound Semiconductor Surface
p.43

Nanoscale Etching of GaAs and InP in Acidic H₂O₂ Solution: A Striking Contrast in Kinetics and Surface Chemistry
p.48

HomeSolid State PhenomenaSolid State Phenomena Vol. 282Carbon Removal and Native Oxide Cleaning on Si and...

Carbon Removal and Native Oxide Cleaning on Si and SiGe Surfaces in Previum Chamber

Abstract:

Advanced technology node demands new capabilities in pre-cleaning substrates of epitaxy films. In particular, cleaning carbon and native oxide on Si and SiGe surfaces are required. In this paper, we present an approach to cleaning both carbon and Si/SiGe native oxide using Previum chamber with two distinct chemistries. FTIR and SEM are used to characterize the conversion and sublimation steps of cleaning native oxide, and carbon film etch rate by hydrogen radicals is presented. The carbon cleaning and oxide cleaning capabilities are integrated in Previum chamber and significantly improved cleaning results are supported by SIMS.

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Periodical:

Solid State Phenomena (Volume 282)

Pages:

25-30

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.282.25

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Online since:

August 2018

Authors:

Fei Wang*, Bubesh Jotheeswaran, John Tolle, Xing Lin, Pei Pei Gao, Alex Demos

Keywords:

Carbon Removal, Downstream Plasma, FTIR, Hydrogen Radicals, Oxide Removal, Silicon, Silicon Germanium

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