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Paper Titles
Preface
Industry Context for Semiconductor Wet Etch and Surface Preparation
p.3
Surface Recombination Velocity Imaging of HF-Etched Si Wafers Using Dynamic Heterodyne Lock-In Carrierography
p.13
Organic Material Removal by Thermally Activated Ozone Gas
p.19
Carbon Removal and Native Oxide Cleaning on Si and SiGe Surfaces in Previum Chamber
p.25
Vapor-Phase Deposition of N3-Containing Monolayers on SiO2 and Si3N4 for Wafer Scale Biofunctionalization
p.31
Toward the Surface Preparation of InGaAs for the Future CMOS Integration
p.39
Effect of WET treatment on Group III-V Compound Semiconductor Surface
p.43
Nanoscale Etching of GaAs and InP in Acidic H2O2 Solution: A Striking Contrast in Kinetics and Surface Chemistry
p.48
HomeSolid State PhenomenaSolid State Phenomena Vol. 282Preface

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Solid State Phenomena (Volume 282)

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August 2018

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