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HomeSolid State PhenomenaSolid State Phenomena Vol. 282Surface Recombination Velocity Imaging of...

Surface Recombination Velocity Imaging of HF-Etched Si Wafers Using Dynamic Heterodyne Lock-In Carrierography

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Abstract:

Surface electronic quality of wet-cleaned Si wafers was characterized quantitatively and all-optically via spatially-resolved surface recombination velocity (SRV) imaging using InGaAs-camera-based dynamic heterodyne lock-in carrierography. Six samples undergone four different hydrofluoric special-solution etching conditions were tested, their SRV distributions at different queue times after the hydrogen passivation processes were obtained, and a quantitative assessment of their surface electronic quality was made based on the evolution behavior of globally-integrated information from the SRV images. The data acquisition time for an SRV image with full camera pixel resolution was about 3 min. The methodology introduced here is promising for in-line nondestructive testing/evaluation and quality control at different fabrication/manufacturing stages in the electronic industry. Keywords: heterodyne lock-in carrierography, surface recombination velocity, quantitative imaging, HF etching, Si wafers

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Solid State Phenomena (Volume 282)

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13-18

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.282.13

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Online since:

August 2018

Authors:

Qi Ming Sun, Alexander Melnikov, Andreas Mandelis*, Robert Pagliaro

Keywords:

Heterodyne Lock-In Carrierography, HF Etching, Quantitative Imaging, Si Wafers, Surface Recombination Velocity

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© 2018 Trans Tech Publications Ltd. All Rights Reserved

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