Effect of WET treatment on Group III-V Compound Semiconductor Surface

Kenya Nishio; Suguru Saito; Yoshiya Hagimoto; Hayato Iwamoto

doi:10.4028/www.scientific.net/SSP.282.43

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Toward the Surface Preparation of InGaAs for the Future CMOS Integration
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Effect of WET treatment on Group III-V Compound Semiconductor Surface
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Effect of WET treatment on Group III-V Compound Semiconductor Surface

Abstract:

In this work, we investigated interfacial properties of InP, which is a typical group III-V compound used for semiconductors, by using a chemical-treated metal oxide semiconductor (MOS) capacitor. The interfacial properties of InP is more affected by interface state density than the surface roughness and is greatly affected by In₂O₃ in particular. Additionally, we evaluated In₂O₃ growth during 24-hour rinsing and air exposure and found that In₂O₃ on an InP surface grows larger during rinsing than during air exposure. To reduce In₂O₃, the rinse needs to be optimized.