Organic Material Removal by Thermally Activated Ozone Gas

Kota Sotoku; Masaki Inaba; Hiroaki Takahashi

doi:10.4028/www.scientific.net/SSP.282.19

Paper Titles

Preface

Industry Context for Semiconductor Wet Etch and Surface Preparation
p.3

Surface Recombination Velocity Imaging of HF-Etched Si Wafers Using Dynamic Heterodyne Lock-In Carrierography
p.13

Organic Material Removal by Thermally Activated Ozone Gas
p.19

Carbon Removal and Native Oxide Cleaning on Si and SiGe Surfaces in Previum Chamber
p.25

Vapor-Phase Deposition of N₃-Containing Monolayers on SiO₂ and Si₃N₄ for Wafer Scale Biofunctionalization
p.31

Toward the Surface Preparation of InGaAs for the Future CMOS Integration
p.39

Effect of WET treatment on Group III-V Compound Semiconductor Surface
p.43

Nanoscale Etching of GaAs and InP in Acidic H₂O₂ Solution: A Striking Contrast in Kinetics and Surface Chemistry
p.48

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Organic Material Removal by Thermally Activated Ozone Gas

Abstract:

We investigated an alternative technology to conventional organic material removal that replaces sulfuric acid and hydrogen peroxide (SPM). We assumed that the removal model of organic material by ozone gas was absorption of oxygen radicals, generated by thermal decomposition of ozone, on a surface and subsequent reaction with organic materials. Then we characterized the correlation between removal rate and process parameter, and the validity of the model was verified. It also showed that this method is effective for high dose, ion-implanted photoresists.