Developing Integrated Solutions and Wet Cleans to Eliminate Tungsten Contact Attack in Sub 0x nm Nodes

Akshey Sehgal; Michael DeVre; Elango Balu

doi:10.4028/www.scientific.net/SSP.282.273

Paper Titles

Optimization of Wet Strip for Metal Void Reduction in Trench First Metal Hard Mask Back End of Line Process
p.250

Corrosion of Co in BEOL interconnects in dilute HF solution
p.256

Effect of Cleaning Chemistries on Cobalt: Surface Chemistries and Electrical Characterization
p.263

Optimization of Post Etch Cobalt Compatible Clean by pH and Oxidizer
p.268

Developing Integrated Solutions and Wet Cleans to Eliminate Tungsten Contact Attack in Sub 0x nm Nodes
p.273

Post-CMP Cleaners for Tungsten Advanced Nodes: 10nm and 7nm
p.278

Wet-Chemical Etching of Ruthenium in Acidic Ce⁴⁺ Solution
p.284

Versatile Aqueous Chemistry for Selective Ru or WNx Etch and Implant BARC Removal in 5- and 3-nm Applications
p.288

Impact of Controlled Ni Contamination on Silicon Solar Wafer Material
p.295

HomeSolid State PhenomenaSolid State Phenomena Vol. 282Developing Integrated Solutions and Wet Cleans to...

Developing Integrated Solutions and Wet Cleans to Eliminate Tungsten Contact Attack in Sub 0x nm Nodes

Abstract:

Having successfully developed high volume manufacturing (HVM) processes for the 0x nm node, the semiconductor industry is now engaged in developing the next advanced node. This 0xnm node development is being accomplished by a combination of shrinking 0x nm dimensions, introducing new materials and films and consequently new lithography, dry etch and wet clean processes for the new node. One of the major challenges is developing processes, including BEOL Cleans Steps, to successfully and reliably expose the MOL metal contact during the first metal line formation without degrading the contact itself. One such compatible method/clean is discussed in this study.

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Periodical:

Solid State Phenomena (Volume 282)

Pages:

273-277

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.282.273

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Online since:

August 2018

Authors:

Akshey Sehgal, Michael DeVre, Elango Balu*

Keywords:

High Volume Manufacturing, Missing W, Post CMP Wet Cleans, Sub 0x nm Manufacturing, W Contact

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References

[1] C-C. Hung et al., Electrochemical and Solid State Letters, 10 (2007) pp. D100-D103.

Google Scholar

[2] Chen, Li-Min & Lippy, Steven & White, Daniela & Cooper, Emanuel. (2016). Aqueous formulations for removing metal hard mask and post-etch residue with Cu/W compatibility.

Google Scholar

[3] Cooper, Emanuel & Rajaram, Rekha & Payne, Makonnen & Lippy, Steven. (2012). Selective High-Throughput TiN Etching Methods. Solid State Phenomena. 195. 143-145. 10.4028/www.scientific.net/SSP.195.143.

DOI: 10.4028/www.scientific.net/ssp.195.143

Google Scholar

[4] Seo, Jihoon & You, Keungtae & Moon, Jinok & Kim, Patrick Joo Hyun & Paik, Ungyu. (2017).

Google Scholar

[5] Mistkawi, Nabil George, Fundamental Studies in Selective Wet Etching and Corrosion Processes for High-Performance Semiconductor Devices, (2010). Dissertations and Theses. Paper 6.

DOI: 10.15760/etd.6

Google Scholar