Optimization of Post Etch Cobalt Compatible Clean by pH and Oxidizer

Hideaki Iino; Yuichi Ogawa; Toru Masaoka; Quoc Toan Le; Els Kesters; Jens Rip; Yusuke Oniki; Yuya Akanishi; Akihisa Iwasaki; Frank Holsteyns

doi:10.4028/www.scientific.net/SSP.282.268

Paper Titles

BEOL Post-Etch Clean Robustness Improvement with Ultra-Diluted Hf for 28nm Node
p.244

Optimization of Wet Strip for Metal Void Reduction in Trench First Metal Hard Mask Back End of Line Process
p.250

Corrosion of Co in BEOL interconnects in dilute HF solution
p.256

Effect of Cleaning Chemistries on Cobalt: Surface Chemistries and Electrical Characterization
p.263

Optimization of Post Etch Cobalt Compatible Clean by pH and Oxidizer
p.268

Developing Integrated Solutions and Wet Cleans to Eliminate Tungsten Contact Attack in Sub 0x nm Nodes
p.273

Post-CMP Cleaners for Tungsten Advanced Nodes: 10nm and 7nm
p.278

Wet-Chemical Etching of Ruthenium in Acidic Ce⁴⁺ Solution
p.284

Versatile Aqueous Chemistry for Selective Ru or WNx Etch and Implant BARC Removal in 5- and 3-nm Applications
p.288

HomeSolid State PhenomenaSolid State Phenomena Vol. 282Optimization of Post Etch Cobalt Compatible Clean...

Optimization of Post Etch Cobalt Compatible Clean by pH and Oxidizer

Abstract:

The introduction of Co into MOL and BEOL requires a robust wet clean, especially the optimization of the Co rinsing step seems to be critical. The wafer rinsing solutions with a precisely controlled pH and oxidizing additive have been developed to suppress the Co corrosion. In addition, the mechanism of passivation and corrosion of the cobalt surface as well as the passivation stability is discussed.

You might also be interested in these eBooks

Ultra Clean Processing of Semiconductor Surfaces XIV

View Preview

Info:

Periodical:

Solid State Phenomena (Volume 282)

Pages:

268-272

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.282.268

Citation:

Cite this paper

Online since:

August 2018

Authors:

Hideaki Iino*, Yuichi Ogawa, Toru Masaoka, Quoc Toan Le, Els Kesters, Jens Rip, Yusuke Oniki, Yuya Akanishi, Akihisa Iwasaki, Frank Holsteyns

Keywords:

Ammonium Solution, BEOL, Cobalt, Functional Water, Hydrogen Peroxide, MOL

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] C. Auth et al., A 10nm High Performance and Low-Power CMOS Technology Featuring 3rd Generation FinFET Transistors, Self-Aligned Quad Patterning, Contact over Active Gate and Cobalt Local Inte rconnects,, IEEE International Electron Devices Meeting (IEDM), p.29.1.1 - 29.1.4 (2017).

DOI: 10.1109/iedm.2017.8268472

Google Scholar

[2] M. H van der Veen et al., Cobalt Bottom-Up Contact and Via Prefill enabling Advanced Logic and DRAM Technologies,, IITC, p.25 – 28 (2015).

DOI: 10.1109/iitc-mam.2015.7325605

Google Scholar

[3] T. Nogamiet al., Cobalt/Copper Composite Interconnects for Line Resistance Reduction in both Fine and Wide Lines,, IITC, 12.2 (2017).

Google Scholar

[4] F. W Mont al., Cobalt Interconnect on Same Copper Barrier Process Integration at the 7 nm node,, IITC, p.1 – 3 (2017).

DOI: 10.1109/iitc-amc.2017.7968971

Google Scholar

[5] M. Pourbaix, Atlas of Electrochemical Equilibria in Aqueous Solutions,, NACE International Cebelcor, p.384 – 392 (1974).

Google Scholar

[6] M. Pourbaix, Atlas of Electrochemical Equilibria in Aqueous Solutions,, NACE International Cebelcor, p.322 – 329 (1974).

Google Scholar