Wet-Chemical Etching of Ruthenium in Acidic Ce4+ Solution

Harold Philipsen; Sander Teck; Nils Mouwen; Wouter Monnens; Quoc Toan Le

doi:10.4028/www.scientific.net/SSP.282.284

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Post-CMP Cleaners for Tungsten Advanced Nodes: 10nm and 7nm
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Wet-Chemical Etching of Ruthenium in Acidic Ce⁴⁺ Solution
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Versatile Aqueous Chemistry for Selective Ru or WNx Etch and Implant BARC Removal in 5- and 3-nm Applications
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Impact of Controlled Ni Contamination on Silicon Solar Wafer Material
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Influence of VPT Treatment on Microscopic Distribution of Trace Metal Contaminants and its Effect on TXRF Measurement
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Wet-Chemical Etching of Ruthenium in Acidic Ce⁴⁺ Solution

Abstract:

The wet-chemical etching of ruthenium in acidic solutions of cerium (IV) has been investigated using electrochemical methods. Etch rates were determined using Rutherford backscattering spectroscopy (RBS) and post-etching surface roughness was investigated using atomic force microscopy (AFM). Low-k material is compatible with the etchant, however, residues were formed.