Post-CMP Cleaners for Tungsten Advanced Nodes: 10nm and 7nm

Ruben R. Lieten; Daniela White; Thomas Parson; Michael White

doi:10.4028/www.scientific.net/SSP.282.278

Paper Titles

Corrosion of Co in BEOL interconnects in dilute HF solution
p.256

Effect of Cleaning Chemistries on Cobalt: Surface Chemistries and Electrical Characterization
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Optimization of Post Etch Cobalt Compatible Clean by pH and Oxidizer
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Developing Integrated Solutions and Wet Cleans to Eliminate Tungsten Contact Attack in Sub 0x nm Nodes
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Post-CMP Cleaners for Tungsten Advanced Nodes: 10nm and 7nm
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Wet-Chemical Etching of Ruthenium in Acidic Ce⁴⁺ Solution
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Versatile Aqueous Chemistry for Selective Ru or WNx Etch and Implant BARC Removal in 5- and 3-nm Applications
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Impact of Controlled Ni Contamination on Silicon Solar Wafer Material
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Wet Processing in State-of-the-Art Cu(In,Ga)(S,Se)₂ Thin Film Solar Cells
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HomeSolid State PhenomenaSolid State Phenomena Vol. 282Post-CMP Cleaners for Tungsten Advanced Nodes:...

Post-CMP Cleaners for Tungsten Advanced Nodes: 10nm and 7nm

Abstract:

Chemical Mechanical Planarization (CMP) is a key process for IC manufacturers. Tungsten (W) is an important material for connecting logic elements and for connecting memory elements, thanks to its excellent planarization, filling, mechanical and electromigration properties. W slurries are developed to remove high amounts of W via an abrasive, in conjunction with an oxidizer. After the polishing process, the planarized surface is contaminated with abrasive particles, organic residue, pad debris and metal cations through covalent or hydrogen-bonding, electrostatic and Van der Waals attractions. Post-CMP cleaning is required to remove all these contaminants while exhibiting low galvanic and chemical corrosion. Formulated cleans are needed to meet all these requirements. The performance of formulated W/TiN post-CMP cleaners for N10 and N7 has been evaluated. The newly developed formulations show a factor 4 reduction in metal surface contamination (from ~2 x 10¹² atoms/cm² to ~ 5 x 10¹¹ atoms/cm²), which is important to prevent dielectric breakdown. Very low particulate and organic residue defectivity was additionally confirmed by different surface characterization techniques: XPS, FTIR, contact angle/surface energy.

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Periodical:

Solid State Phenomena (Volume 282)

Pages:

278-283

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.282.278

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Online since:

August 2018

Authors:

Ruben R. Lieten, Daniela White, Thomas Parson, Michael White

Keywords:

Galvanic Corrosion, Organic Residue, Particle-Count Defectivity, Post-CMP Formulations, Silicon Nitride, SiO₂, Tafel, Tungsten 10nm Nodes, Tungsten 7nm Nodes, TXRF, W/TiN Barrier Liners

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References

[1] D. White, J. Parker, Polyoxometalate Compositions and Methods, US 8,057,561B2 (2011).

Google Scholar

[2] L. Fu, S. Grumbine, J. Dysard, T. Li, Tungsten Chemical-Mechanical Polishing Composition, US 2015/0376462 A1 (2015).

Google Scholar

[3] S. Wolf, Silicon Processing for the VLSI Era: Deep-Submicron Process Technology, Vol. 4. Lattice Press, (2002).

Google Scholar

[4] E.K. Broadbent, J.M. Flanner, W.G.M. Van den Hoek, IEEE Transactions on Electron Devices 35, 952 (1988).

DOI: 10.1109/16.3350

Google Scholar

[5] W. Kern and D. A. Puotinen: RCA Rev. 31, 187 (1970).

Google Scholar

[6] R. R. Lieten, D. White, T. Parson, S. Jenq, D. Frye, M. White, L. Teugels, H. Struyf, Post-CMP Cleaners for Tungsten at Advanced Nodes, Solid State Phenomena 255, 186-194 (2016).

DOI: 10.4028/www.scientific.net/ssp.255.186

Google Scholar

[7] S. Verhaverbeke, M. Meuris, P.W. Mertens, M.M. Heyns, A. Philipossian, D. Graf, A. Schnegg, The effect of metallic impurities on the dielectric breakdown of oxides and some new ways of avoiding them, Electron Devices Meeting, 1991. IEDM '91.

DOI: 10.1109/iedm.1991.235421

Google Scholar