Influence of VPT Treatment on Microscopic Distribution of Trace Metal Contaminants and its Effect on TXRF Measurement

Article Preview

Abstract:

We have found that to the detection sensitivity of Total reflection X-ray fluorescent spectrometry (TXRF), the total volume of trace particles generated by vapor phase treatment (VPT) must be increased and metal atoms need to be included in the particles. The detection sensitivity for Cu is enhanced by assisting Cu ionization in the liquid drops condensed form the vapor. We consider that since incident and reflected X-rays resonate 30nm from the surface, the total reflection intensity of metals included in the particles is enhanced.

You might also be interested in these eBooks

Info:

Periodical:

Solid State Phenomena (Volume 282)

Pages:

309-313

Citation:

Online since:

August 2018

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2018 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

[1] R. Klockenkaemper, Total-reflection X-ray fluorescence Analysis,, Chemical analysis vol. 140, 1997, J Wiley & Sons, p.162.

Google Scholar

[2] A. Shimazaki, K. Miyazaki, T. Matsumura, and S. Ito, Analysis of Low Metallic Contamination on Silicon Wafer Surfaces by Vapor-Phase Treatment and Total Reflection X-ray Fluorescence Analysis,, Jpn. J. Appl. Phys., 45,12 (2006).

DOI: 10.1143/jjap.45.9037

Google Scholar

[3] H. Takahara, Y. Mori, A. Shimazaki, and Y. Gohshi, Vapor phase treatment–total reflection X-ray fluorescence for trace elemental analysis of silicon wafer surface,, Spectrochimica Acta Part B, 65, 1022 (2010).

DOI: 10.1016/j.sab.2010.11.006

Google Scholar

[4] M. K. Tiwari, G. M. Bhalerao, M. Babu, A. K. Sinha, and C. Mukherjee, Investigation of metal nanoparticles on a Si surface using an x-ray standing wave field,, J. Appl. Phys., 103, 054311 (2008).

DOI: 10.1063/1.2885346

Google Scholar

[5] H. Morinaga, M. Suyama, M. Nose, S. Verhaverbeke, and T. Ohmi, A Model for the Electrochemical Deposition and Removal of Metallic Impurities on Si Surfaces,, IEICE Trans. Electron., E79-C, 343 (1996).

Google Scholar

[6] I. Teerlinck, P.W. Mertens, H. F. Schmidt, M. Meuris, and M.M. Heyns, Impact of the Electrochemical Properties of Silicon Wafer Surfaces on Copper Outplating from HF Solutions,, J. Electrochem. Soc., 143, 3323 (1996).

DOI: 10.1149/1.1837205

Google Scholar