Surface-Localized 15R Formation on 4H-SiC (0001) Si-Face by Laser Annealing for Power N-Type MOSFETs

Fabien Roze; Toshiyuki Tabata; Sébastien Kerdilès; Leonard M. Rubin; Pierre-Edouard Raynal; Pablo Acosta-Alba; Dwight Dongwan Roh; Mathieu Opprecht; Fulvio Mazzamuto

doi:10.4028/p-94455v

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HomeSolid State PhenomenaSolid State Phenomena Vol. 342Surface-Localized 15R Formation on 4H-SiC (0001)...

Surface-Localized 15R Formation on 4H-SiC (0001) Si-Face by Laser Annealing for Power N-Type MOSFETs

Abstract:

A SiC MOSFET fabricated on a thin 15R-SiC layer on top of a 4H-SiC would benefit from both the higher inversion channel mobility of 15R-SiC and higher bulk mobility of 4H-SiC. In this work, a method based on Al implantation followed by UV laser annealing (UV-LA) to form 15R-SiC on 4H is shown. Evaluation of crystal quality and SiC polytype identification are performed by Raman spectroscopy. We show that UV-LA is able to grow 15R-SiC and cure the crystal damaged by ion implantation until a level close to the pristine substrate. This opens new perspectives for fabrication of SiC n-type MOSFETs.

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Periodical:

Solid State Phenomena (Volume 342)

Pages:

79-83

DOI:

https://doi.org/10.4028/p-94455v

Citation:

Cite this paper

Online since:

May 2023

Authors:

Fabien Roze*, Toshiyuki Tabata, Sébastien Kerdilès, Leonard M. Rubin, Pierre-Edouard Raynal, Pablo Acosta-Alba, Dwight Dongwan Roh, Mathieu Opprecht, Fulvio Mazzamuto

Keywords:

15R, Laser Annealing, SiC

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Creative Commons CC BY 4.0

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* - Corresponding Author

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