Optimizing Non-Contact Doping and Electrical Defect Metrology for Production of SiC Epitaxial Wafers

Vladimir Pushkarev; Tawhid Rana; Matthew Gave; Edward Sanchez; Alexandre Savtchouk; Marshall Wilson; Dmitriy Marinskiy; Jacek Lagowski

doi:10.4028/p-bd78p0

Paper Titles

Transport Phenomena during Liquid Si-Induced 4H-SiC Surface Structuring in a Sandwich Configuration
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Surface-Localized 15R Formation on 4H-SiC (0001) Si-Face by Laser Annealing for Power N-Type MOSFETs
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Exploring UV-Laser Effects on Al-Implanted 4H-SiC
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Benchmarking Experiment of Substrate Quality including SmartSiC^TM Wafers by Epitaxy in a Batch Reactor
p.91

Optimizing Non-Contact Doping and Electrical Defect Metrology for Production of SiC Epitaxial Wafers
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Quality Evaluation of 150 mm 4H-SiC Grown at over 1.5 mm/h by High-Temperature Chemical Vapor Deposition Method
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Deep Level Reduction in 4H-SiC Treated by Plasma Immersion
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Improving the Polishing Speed and Surface Quality of 4H-SiC Wafers with an MnO₂- Based Slurry
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Preparation, Characterization and Tribological Performance of Polyurethane (PU) Coatings Filled with Graphene Oxide (GO)
p.127

HomeSolid State PhenomenaSolid State Phenomena Vol. 342Optimizing Non-Contact Doping and Electrical...

Optimizing Non-Contact Doping and Electrical Defect Metrology for Production of SiC Epitaxial Wafers

Abstract:

The recently introduced corona charge non-contact capacitance-voltage technique, CnCV, is analyzed considering the production needs of epitaxial SiC wafers. The interfering mechanism of charge dissipation on fresh epitaxial 4H-SiC is identified as surface diffusion and is effectively eliminated by optimized ultraviolet pretreatment (UVPT). It is shown that optimized UVPT increases the CnCV dopant measurement voltage range and the depth of profiling. Concurrent UVPT and measurement provides a practical solution for improving throughput for multiple wafers. Electrical defect mapping shows that UVPT reduces the effective defect size. This will be helpful to avoid defects in patterns used for CnCV dopant measurements.

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Periodical:

Solid State Phenomena (Volume 342)

Pages:

99-104

DOI:

https://doi.org/10.4028/p-bd78p0

Citation:

Cite this paper

Online since:

May 2023

Authors:

Vladimir Pushkarev*, Tawhid Rana, Matthew Gave, Edward Sanchez, Alexandre Savtchouk, Marshall Wilson, Dmitriy Marinskiy, Jacek Lagowski

Keywords:

CnCV, Corona Non-Contact C-V, Defect, Doping, Epitaxial 4H-SiC

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Creative Commons CC BY 4.0

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* - Corresponding Author

References

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