Deep Level Reduction in 4H-SiC Treated by Plasma Immersion

Giovanni Alfieri; Lars Knoll

doi:10.4028/p-f8742c

Paper Titles

Exploring UV-Laser Effects on Al-Implanted 4H-SiC
p.85

Benchmarking Experiment of Substrate Quality including SmartSiC^TM Wafers by Epitaxy in a Batch Reactor
p.91

Optimizing Non-Contact Doping and Electrical Defect Metrology for Production of SiC Epitaxial Wafers
p.99

Quality Evaluation of 150 mm 4H-SiC Grown at over 1.5 mm/h by High-Temperature Chemical Vapor Deposition Method
p.105

Deep Level Reduction in 4H-SiC Treated by Plasma Immersion
p.113

Improving the Polishing Speed and Surface Quality of 4H-SiC Wafers with an MnO₂- Based Slurry
p.119

Preparation, Characterization and Tribological Performance of Polyurethane (PU) Coatings Filled with Graphene Oxide (GO)
p.127

Brush Plating of Ag-Bi Coatings from a Cyanide-Free Solution
p.133

Effect of Alternate Cycle Temperature on the Tribological Performance of Polyimide Composites
p.139

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Deep Level Reduction in 4H-SiC Treated by Plasma Immersion

Abstract:

The carbon vacancy (V_C) is a lifetime-killer defect that hinders the correct functionality of 4H-SiC bipolar devices. Until now, different methods based on carbon interstitial injection, have been proposed, in order to reduce its concentration. However, if on one hand these methods effectively reduce the V_C concentration in the epilayer, on the other they cannot prevent the re-generation of V_C occurring during the manufacture of a p-i-n diode, e.g., p+ implantation and activation. In the following contribution, we employ PIII of B for the formation of the anode for a p-i-n diode. We show that by PIII, it is possible to simultaneously form a p⁺n junction with a low concentration of V_C in the drift layer.