Benchmarking Experiment of Substrate Quality including SmartSiCTM Wafers by Epitaxy in a Batch Reactor

Birgit Kallinger; Philip Hens; Christian Kranert; Kevin M. Albrecht; Jürgen Erlekampf

doi:10.4028/p-av6tdz

Paper Titles

High-Speed Plasma Etching of Gallium Oxide Substrates Using Atmospheric-Pressure Plasma with Hydrogen-Helium Mixed Gas
p.69

Transport Phenomena during Liquid Si-Induced 4H-SiC Surface Structuring in a Sandwich Configuration
p.73

Surface-Localized 15R Formation on 4H-SiC (0001) Si-Face by Laser Annealing for Power N-Type MOSFETs
p.79

Exploring UV-Laser Effects on Al-Implanted 4H-SiC
p.85

Benchmarking Experiment of Substrate Quality including SmartSiC^TM Wafers by Epitaxy in a Batch Reactor
p.91

Optimizing Non-Contact Doping and Electrical Defect Metrology for Production of SiC Epitaxial Wafers
p.99

Quality Evaluation of 150 mm 4H-SiC Grown at over 1.5 mm/h by High-Temperature Chemical Vapor Deposition Method
p.105

Deep Level Reduction in 4H-SiC Treated by Plasma Immersion
p.113

Improving the Polishing Speed and Surface Quality of 4H-SiC Wafers with an MnO₂- Based Slurry
p.119

HomeSolid State PhenomenaSolid State Phenomena Vol. 342Benchmarking Experiment of Substrate Quality...

Benchmarking Experiment of Substrate Quality including SmartSiC^TM Wafers by Epitaxy in a Batch Reactor

Abstract:

The feasibility of thin 4H-SiC layers bonded on an alternative carrier substrate for the application as substrate in SiC epitaxy is investigated. Epitaxial layers grown on such substrates are compared to those on state-of-the-art conventional substrates from different sources. The performance of the substrates is judged by the occurrence of killer defects in the epitaxial layer as analyzed using a PL scanning tool. Additional investigations on the material properties were carried out using X-ray topography and Atomic Force Microscopy, yielding information on the crystallinity, the lattice curvature, and the surface properties of the epitaxial layers.

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Periodical:

Solid State Phenomena (Volume 342)

Pages:

91-98

DOI:

https://doi.org/10.4028/p-av6tdz

Citation:

Cite this paper

Online since:

May 2023

Authors:

Birgit Kallinger*, Philip Hens, Christian Kranert, Kevin M. Albrecht, Jürgen Erlekampf

Keywords:

Atomic Force Microscopy, Bonded Substrate, Engineered Substrate, Epitaxial Defects, Epitaxial Growth, Substrate, X-Ray Topography

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Creative Commons CC BY 4.0

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* - Corresponding Author

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