Quality Evaluation of 150 mm 4H-SiC Grown at over 1.5 mm/h by High-Temperature Chemical Vapor Deposition Method

Takeshi Okamoto; Hideyuki Uehigashi; Takahiro Kanda; Nobuyuki Ohya; Akiyoshi Horiai; Soma Sakakibara; Takashi Kanemura; Kiyoshi Betsuyaku; Norihiro Hoshino; Isaho Kamata; Hidekazu Tsuchida

doi:10.4028/p-09h52t

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HomeSolid State PhenomenaSolid State Phenomena Vol. 342Quality Evaluation of 150 mm 4H-SiC Grown at over...

Quality Evaluation of 150 mm 4H-SiC Grown at over 1.5 mm/h by High-Temperature Chemical Vapor Deposition Method

Abstract:

To reduce manufacturing costs, high-quality 150 mm 4H-SiC wafers were grown at over 1.5 mm/h by high-temperature chemical vapor deposition. The dislocations in the initial growth stage did not increase compared with those in the seed crystal. The dislocation densities decreased during crystal growth, and the densities of threading dislocations and basal plane dislocations at the growth thickness of 7.1 mm were 1186 and 211 /cm², respectively. The resolved shear stress, which is the cause of the increase in dislocations during growth, was calculated based on thermal fluid simulations; the shear stress of the grown crystal with a flat surface was small compared with that of the convex-shaped crystal. The dislocations did not increase likely because the crystals grown at high speeds were relatively flat. In addition, the decrease in dislocations was attributed to the frequent annihilation of dislocations due to the growth at a high temperature (2490 °C).

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Info:

Periodical:

Solid State Phenomena (Volume 342)

Pages:

105-112

DOI:

https://doi.org/10.4028/p-09h52t

Citation:

Cite this paper

Online since:

May 2023

Authors:

Takeshi Okamoto*, Hideyuki Uehigashi, Takahiro Kanda, Nobuyuki Ohya, Akiyoshi Horiai, Soma Sakakibara, Takashi Kanemura, Kiyoshi Betsuyaku, Norihiro Hoshino, Isaho Kamata, Hidekazu Tsuchida

Keywords:

Crystal Growth, Crystal Quality, Fast Growth, High-Temperature Chemical Vapor Deposition Method, HTCVD

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Creative Commons CC BY 4.0

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* - Corresponding Author

References

[1] A.R. Powell, Industrial Perspectives of SiC Bulk Growth, in: P. Wellman, N. Ohtani and R. Rupp (Eds.), Wide Bandgap Semiconductors for Power Electronics, WILEY-VCH, Weinheim, 2022, pp.33-46.