Transport Phenomena during Liquid Si-Induced 4H-SiC Surface Structuring in a Sandwich Configuration

Yann Jousseaume; François Cauwet; Gabriel Ferro

doi:10.4028/p-3ilk20

Paper Titles

Green Biosynthesis of Zinc Oxide Nanoparticles Utilizing Pomegranate Peel Extract for Grey Water Treatment
p.27

Design and Implementation of Montmorillonite Clay-Based Catalyst for Carbon Nanotube Synthesizing
p.37

Heptachlor Epoxide -Pesticide- Removal from Aqueous Solutions Using Nano Zero Valent Iron: Operating Conditions, Response Surface Methodology, and Artificial Intelligence Neural Networks
p.51

High-Speed Plasma Etching of Gallium Oxide Substrates Using Atmospheric-Pressure Plasma with Hydrogen-Helium Mixed Gas
p.69

Transport Phenomena during Liquid Si-Induced 4H-SiC Surface Structuring in a Sandwich Configuration
p.73

Surface-Localized 15R Formation on 4H-SiC (0001) Si-Face by Laser Annealing for Power N-Type MOSFETs
p.79

Exploring UV-Laser Effects on Al-Implanted 4H-SiC
p.85

Benchmarking Experiment of Substrate Quality including SmartSiC^TM Wafers by Epitaxy in a Batch Reactor
p.91

Optimizing Non-Contact Doping and Electrical Defect Metrology for Production of SiC Epitaxial Wafers
p.99

HomeSolid State PhenomenaSolid State Phenomena Vol. 342Transport Phenomena during Liquid Si-Induced...

Transport Phenomena during Liquid Si-Induced 4H-SiC Surface Structuring in a Sandwich Configuration

Abstract:

4H-SiC/Si_(liq)/4H-SiC stacks were treated at 1550-1600°C under H₂ in a RF-heated cold-wall reactor in order to generate macrosteps-structuring of the 4°off SiC(0001) wafers. Using 400 μm thick liquid Si, the observed important matter transport from the edges to the center of the same wafer was attributed to RF-induced convection rolls inside the thick liquid Si. When the liquid thickness was reduced down to 30 μm, the matter transport followed this time the vertical thermal gradient like in the case of liquid phase epitaxy. The dissolution rate of the bottom (hotter) wafer was found to increase from 1.7 μm/h at 1550°C to 3.3 μm/h at 1600°C. The use of H₂ gas was found essential to the system since it does not generate gas trapping (unlike Ar) and it participates to the creation of the vertical thermal gradient.

By email View Pdf

You might also be interested in these eBooks

International Conference on Silicon Carbide and Related Materials ICSCRM 2022

View Preview

Semiconductor Wafer Fabrication, Coatings and Tribology

View Preview

Info:

Periodical:

Solid State Phenomena (Volume 342)

Pages:

73-78

DOI:

https://doi.org/10.4028/p-3ilk20

Citation:

Cite this paper

Online since:

May 2023

Authors:

Yann Jousseaume, François Cauwet, Gabriel Ferro*

Keywords:

4H-SiC, Carbon Transport, Liquid Silicon, Morphology, Surface Structuration

Export:

RIS, BibTeX

Permissions:

Creative Commons CC BY 4.0

Citation:

* - Corresponding Author

References

[1] J. Woerle, B. C. Johnson, C. Bongiorno, K. Yamasue, G. Ferro, D. Dutta, T. A. Jung, H. Sigg, Y. Cho, U. Grossner, and M. Camarda, Phys. Rev. Mater., 3, (2019) 84602

Google Scholar

[2] I. D. P. Fiorenza, F. Iucolano, G. Nicotra, C. Bongiorno, F. A. L. Magna, F. Giannazzo, M. Saggio, C. Spinella, F. Roccaforte, Nanotechnology, 29, (2018) p.39

DOI: 10.1088/1361-6528/aad129

Google Scholar

[3] M. Camarda, J. Woerle, V. Souliere, G. Ferro, H. Sigg, U. Grossner, and J. Gobrecht, Mater. Sci. Forum, 897, (2017) p.107

DOI: 10.4028/www.scientific.net/msf.897.107

Google Scholar

[4] Y. Jousseaume, F. Cauwet, G. Ferro, Mater. Sci. Forum, 1062 (2022) p.8

Google Scholar

[5] X. Xing, T. Yoshikawa, O. Budenkova, D. Chaussende, J. Mater. Sci. 57 (2) (2022) p.972

Google Scholar

[6] F. Mercier, J. M. Dedulle, D. Chaussende, M. Pons, J. Cryst. Growth, 312, 2, (2010) p.155

Google Scholar

[7] U. Burr, U. Müller, J. Fluid Mech., 453, (2002) p.345

Google Scholar

[8] Y. Tasaka, T. Yanagisawa, K. Fujita, T. Miyagoshi, A. Sakuraba, J. Fluid Mech., 911 (2021) p.1

Google Scholar

[9] R. I. Scace, G. A. Slack, J. Chem. Phys., 30, (1959), p.1551

Google Scholar

[10] K. Yanaba, M. Akasaka, M. Takeuchi, M. Watanabe, T. Narushima, Y. Iguchi, Materials Transactions, 38, 11 (1997) p.990.

DOI: 10.2320/matertrans1989.38.990

Google Scholar

[11] K. Alassaad, V. Soulière, F. Cauwet, D. Carole, G. Ferro, Mater. Sci. Forum, 821–823, (2015), p.121

DOI: 10.4028/www.scientific.net/msf.821-823.121

Google Scholar

[12] C. Hallin, F. Owman, P. Martenssor, A. Ellison, A. Konstantinov, O. Kordina, E. Janzèn, J. Cryst. Growth, 181, (197), p.241

Google Scholar

[13] L.A. Marasina, V. V. Malinovsky, I. G. Pichugin, P. Prentky, Crvstal Res. & Technol. 17 (3) (1982) p.365

DOI: 10.1002/crat.2170170320

Google Scholar