A Voltage Adjustable Diode Integrated SiC Trench MOSFET with Barrier Control Gate

Song Jun Li; Xiao Chuan Deng; Xu Li; Xuan Li; Yi Wen

doi:10.4028/p-Hs3sD9

Paper Titles

Modeling the Charging of Gate Oxide under High Electric Field
p.37

Complementary Two Dimensional Carrier Profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy
p.45

Temperature Dependence of 4H-SiC Gate Oxide Breakdown and C-V Properties from Room Temperature to 500 °C
p.51

Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al₂O₃ Interfaces
p.59

A Voltage Adjustable Diode Integrated SiC Trench MOSFET with Barrier Control Gate
p.65

Effects of High Gate Voltage Stress on Threshold Voltage Stability in Planar and Trench SiC Power MOSFETs
p.71

Design of Al₂O₃/LaAlO₃/SiO₂ Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs
p.79

Channel Density Design Guidelines for the Transient Characteristics of SiC Trench Gate MOSFETs
p.89

Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs
p.97

HomeSolid State PhenomenaSolid State Phenomena Vol. 358A Voltage Adjustable Diode Integrated SiC Trench...

A Voltage Adjustable Diode Integrated SiC Trench MOSFET with Barrier Control Gate

Abstract:

Bipolar degradation of the intrinsic bipolar body diode is one of the most important reliability problems associated with SiC MOSFET. In this paper, a voltage adjustable diode (VAD) integrated SiC trench MOSFET (VAD-TMOS) with barrier control gate (BCG) is proposed to overcome this issue. Compared to the intrinsic bipolar body diode of conventional SiC trench MOSFET (C-TMOS), VAD has 57% reduction of the on-state voltage drop. Furthermore, the reverse recovery charge (Q_rr) of VAD-TMOS is only 1.21 μC/cm², whereas the value of C-TMOS is 3.84 μC/cm². The miller charge (Q_gd) of VAD-TMOS is reduced by about 6 × in comparison with that of C-TMOS owing to the reduction of the overlap region of gate and drain terminal. The better third quadrant and fast switching capability make SiC VAD-TMOS a potential candidate as a next generation of power switch.

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Periodical:

Solid State Phenomena (Volume 358)

Pages:

65-70

DOI:

https://doi.org/10.4028/p-Hs3sD9

Citation:

Cite this paper

Online since:

August 2024

Authors:

Song Jun Li, Xiao Chuan Deng*, Xu Li, Xuan Li, Yi Wen

Keywords:

Bipolar Degradation, SiC MOSFET, Third Quadrant, Voltage Adjustable Diode

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Creative Commons CC BY 4.0

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* - Corresponding Author

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