Channel Density Design Guidelines for the Transient Characteristics of SiC Trench Gate MOSFETs

Shinichi Kimoto; Ryosuke Iijima; Shinsuke Harada

doi:10.4028/p-Nb99aW

Paper Titles

Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al₂O₃ Interfaces
p.59

A Voltage Adjustable Diode Integrated SiC Trench MOSFET with Barrier Control Gate
p.65

Effects of High Gate Voltage Stress on Threshold Voltage Stability in Planar and Trench SiC Power MOSFETs
p.71

Design of Al₂O₃/LaAlO₃/SiO₂ Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs
p.79

Channel Density Design Guidelines for the Transient Characteristics of SiC Trench Gate MOSFETs
p.89

Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs
p.97

Revised Channel Mobility Model for Predictive TCAD Simulations of 4H-SiC MOSFETs
p.103

Improvement of Reflectance Spectroscopy for Oxide Layers on 4H-SiC
p.109

Doping and Temperature Dependence of Carrier Lifetime in 4H SiC Epitaxial Layers
p.115

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Channel Density Design Guidelines for the Transient Characteristics of SiC Trench Gate MOSFETs

Abstract:

Channel density design guidelines for SiC trench-gate MOSFETs with low switching loss, and high short-circuit and avalanche capabilities were proposed. The cell and grounding region pitches were used as parameters to control the channel density to investigate the parameter dependence of each transient property. The results suggest a clear difference in the dependence of switching loss reduction and short-circuit/avalanche capability increase on these parameters; however, the extents of dependence of specific on-resistance on the controlling parameters were comparable. The reduction in the grounding region pitch contributed to faster charging of the parasitic drain-source capacitance, which was effective in improving transient characteristics, such as dV/dt at turn-off, and saturation current at short-circuit. Furthermore, a reduction in this distance increased the area-flowing avalanche current and hence, an increase in the avalanche energy. The influence of the two design parameters in effectively improving the trade-off between each transient characteristic and the specific on-resistance was summarized.

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