Paper Titles

Design of Al₂O₃/LaAlO₃/SiO₂ Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs
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Channel Density Design Guidelines for the Transient Characteristics of SiC Trench Gate MOSFETs
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Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs
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Revised Channel Mobility Model for Predictive TCAD Simulations of 4H-SiC MOSFETs
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Improvement of Reflectance Spectroscopy for Oxide Layers on 4H-SiC
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Doping and Temperature Dependence of Carrier Lifetime in 4H SiC Epitaxial Layers
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Fail-to-Open Short Circuit Failure Mode of SiC Power MOSFETs: 2-D Thermo-Mechanical Modeling
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Gate Resistance Integration in SiC MOSFETs: Performance Simulations under Different Implementation Methods
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Fast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in TCAD
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HomeSolid State PhenomenaSolid State Phenomena Vol. 358Improvement of Reflectance Spectroscopy for Oxide...

Improvement of Reflectance Spectroscopy for Oxide Layers on 4H-SiC

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Abstract:

In this work, we investigate the use of reflectance spectroscopy as an accurate, fast, and non-destructive method for measuring the thickness of transparent layers, such as SiO₂, with thicknesses below 200 nm for microelectronic applications. To this end, we fabricated different oxides and analyzed their reflectance spectra using reflectance spectroscopy. The results were compared to theoretical reflectance spectra to validate the method. We introduce key factors to ensure accurate measurement by modeling the reflectance spectra of thin oxide layers with thicknesses ≥ 15 nm on 4H-SiC using the transfer matrix method (TMM).

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Periodical:

Solid State Phenomena (Volume 358)

Pages:

109-114

DOI:

https://doi.org/10.4028/p-lM74BM

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Online since:

August 2024

Authors:

Julien Koerfer*, Mathias Rommel, Alesa Fuchs, Oleg Rusch

Keywords:

4H-SiC, Characterization, Optical Properties, Reflectance Spectroscopy, SiO₂, Transparent Thin Layers

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* - Corresponding Author

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