Variability in FeB Pair Association Rates in Silicon under Ultrasound Loading: Effects of Acoustic Wave Types

Abstract:

Initially, this work briefly outlines how ultrasound can modify and characterize the defect system in semiconductors. Then, the study experimentally examines the effect of different types of acoustic waves on the association of FeB pairs in monocrystalline silicon. The results reveal that as the frequency of longitudinal waves increases, the ultrasound's effectiveness in accelerating the association rate decreases. Conversely, exciting transverse waves show the opposite trend. The study also assesses the potential to obtain a positron-annihilation response from the FeB complex in silicon, highlighting the advantages of conducting such measurements under ultrasound loading of the crystal.

• Periodical: Solid State Phenomena (Volume 374)
• Pages: 69-77
• DOI: https://doi.org/10.4028/p-Gy5yny
• Online since: July 2025
• Authors: Oleg Olikh*, Nikolai Yu. Arutyunov
• Keywords: Acousto-Defect Interaction, Iron-Boron Pair, Point Defect, Positron Annihilation Spectroscopy, Silicon, Ultrasound

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