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HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58Critical Resolved Shear Stress for a Dislocation...

Critical Resolved Shear Stress for a Dislocation Loop Growth, Stability and Retrogrowth in Silicon: Application to the 16 MEG DRAM

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Gettering and Defect Engineering in Semiconductor Technology VII

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Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

275-286

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.275

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Online since:

July 1997

Authors:

B. Leroy

Keywords:

Dislocation, Epitaxy, Film Edge, Loop, Oxidation, Precipitation, Shear, Silicon, Stress, Viscosity

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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