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HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58Defect Formation during Erbium Implantation and...

Defect Formation during Erbium Implantation and Subsequent Annealing of Si:Er

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Gettering and Defect Engineering in Semiconductor Technology VII

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Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

257-262

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.257

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Online since:

July 1997

Authors:

N.A. Sobolev, A.M. Emel'yanov, Yu.A. Kudryavtsev, R.N. Kyutt, M.I. Makovijchuk, Yu.A. Nikolaev, E.O. Parshin, V.I. Sakharov, I.T. Serenkov, Elena I. Shek, K.F. Shtel'makh

Keywords:

Annealing, Erbium, Implantation, Photoluminescence (PL), Silicon, Structural Defects

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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