Paper Titles

Thermal Donors in Silicon Doped with Erbium
p.207

Radiation Induced Defects InGaAs Photodiodes by 1-MeV Fast Neutrons
p.213

Defect Engineering Radiation Tolerant Silicon Detectors
p.221

Microscopic Studies of Radiation Damage-Induced Defects Responsible for the Deterioration of High-Resistivity Silicon Detectors
p.233

Lattice Defects in Si_1-xGe_x Devices by Proton Irradiation and their Effect on Device Performance
p.239

An IR Study of the Annealing Behaviour of A-Center in Silicon
p.245

Lifetime Considerations for High-Energy Proton Irradiated Si p-n Junction Diodes
p.251

Defect Formation during Erbium Implantation and Subsequent Annealing of Si:Er
p.257

Alpha-Particle Irradiation Induced Defects in Metal-Oxide-Semiconductor Silicon Transistor
p.263

HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58Lattice Defects in Si1-xGex Devices by Proton...

Lattice Defects in Si_1-xGe_x Devices by Proton Irradiation and their Effect on Device Performance

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology VII

Info:

Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

239-244

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.239

Citation:

Cite this paper

Online since:

July 1997

Authors:

H. Ohyama, Eddy Simoen, Cor Claeys, Jan Vanhellemont, Y. Takami, H. Sunaga, Jef Poortmans, Matty Caymax

Keywords:

Deep Level, Radiation Damage, Si_1-xGe_x Device, Si_1-xGe_x Strained Epitaxial Layer

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: