Microscopic Studies of Radiation Damage-Induced Defects Responsible for the Deterioration of High-Resistivity Silicon Detectors

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Periodical:

Solid State Phenomena (Volumes 57-58)

Edited by:

C. Claeys, J. Vanhellemont, H. Richter and M. Kittler

Pages:

233-238

DOI:

10.4028/www.scientific.net/SSP.57-58.233

Citation:

H. Feick and M. Moll, "Microscopic Studies of Radiation Damage-Induced Defects Responsible for the Deterioration of High-Resistivity Silicon Detectors", Solid State Phenomena, Vols. 57-58, pp. 233-238, 1997

Online since:

July 1997

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$35.00

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