Paper Titles

Oxygen Precipitation in Silicon Thin Layers in the Presence of Carbon
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Heterogeneous Precipitation of Silicon Oxide in Silicon at Laser Induced Centres
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Diffusion and Precipitation of Oxygen in Silicon Doped with Germanium
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Low-Temperature Doping of P-Type Czochralski Silicon due to Hydrogen Plasma Enhanced Thermal Donor Formation
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Erbium in Silicon: Problems and Challenges
p.197

Thermal Donors in Silicon Doped with Erbium
p.207

Radiation Induced Defects InGaAs Photodiodes by 1-MeV Fast Neutrons
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Defect Engineering Radiation Tolerant Silicon Detectors
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Microscopic Studies of Radiation Damage-Induced Defects Responsible for the Deterioration of High-Resistivity Silicon Detectors
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HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58Erbium in Silicon: Problems and Challenges

Erbium in Silicon: Problems and Challenges

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Gettering and Defect Engineering in Semiconductor Technology VII

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Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

197-206

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.197

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Online since:

July 1997

Authors:

Simona Binetti, M. Donghi, Sergio Pizzini, Antonio Castaldini, Anna Cavallini, B. Fraboni, N.A. Sobolev

Keywords:

DLTS, Light Emitting Devices, Liquid Phase Epitaxy (LPE), Photoluminescence (PL), Si:Er

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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