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Paper Titles
Initial Stage of Oxygen Precipitation in Silicon
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Oxygen Precipitation in Silicon Thin Layers in the Presence of Carbon
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Heterogeneous Precipitation of Silicon Oxide in Silicon at Laser Induced Centres
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Diffusion and Precipitation of Oxygen in Silicon Doped with Germanium
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Low-Temperature Doping of P-Type Czochralski Silicon due to Hydrogen Plasma Enhanced Thermal Donor Formation
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Erbium in Silicon: Problems and Challenges
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Thermal Donors in Silicon Doped with Erbium
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Radiation Induced Defects InGaAs Photodiodes by 1-MeV Fast Neutrons
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Defect Engineering Radiation Tolerant Silicon Detectors
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Low-Temperature Doping of P-Type Czochralski Silicon due to Hydrogen Plasma Enhanced Thermal Donor Formation

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Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

189-196

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.189

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Online since:

July 1997

Authors:

Alexander G. Ulyashin, Yu.A. Bumay, Reinhart Job, G. Grabosch, D. Borchert, Wolfgang R. Fahrner, A.Yu. Diduk

Keywords:

High Energy-Implantation, Hydrogen and Oxygen in Silicon, Hydrogen Diffusion, Hydrogen Plasma, Thermal Donor

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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