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HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58Diffusion and Precipitation of Oxygen in Silicon...

Diffusion and Precipitation of Oxygen in Silicon Doped with Germanium

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Gettering and Defect Engineering in Semiconductor Technology VII

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Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

183-188

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.183

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Online since:

July 1997

Authors:

Lyudmila I. Khirunenko, Yu.V. Pomozov, V.I. Shakhovtsov, V.V. Shumov

Keywords:

Germanium, Oxygen, Relative Oxygen Loss, Silicon, Thermal Donor

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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