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Oxygen Precipitation in Silicon Thin Layers in the Presence of Carbon
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HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58Initial Stage of Oxygen Precipitation in Silicon

Initial Stage of Oxygen Precipitation in Silicon

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Gettering and Defect Engineering in Semiconductor Technology VII

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Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

167-170

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.167

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Online since:

July 1997

Authors:

A. Kornylo, A. Maksymov, M. Pashkovski, I. Savytskii

Keywords:

Angle of Soaking, Computer Simulation, Crystalline Silicon, Infrared Absorption, Microhardness, Monte-Carlo Method (MC-Method), Nucleation Period, Oxygen Precipitation

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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