Paper Titles

Effect of High Temperature Pre-Anneal on Oxygen Precipitates Nucleation Kinetics in Si
p.123

Vacancy-Assisted Oxygen Precipitation Phenomena in Si
p.129

Mechanism of Slip Dislocation Generation by Oxide Precipitates in Czochralski Silicon Wafers
p.137

State of Oxygen and Growth Conditions
p.143

Analyzing Oxygen Precipitation Using the Surface Photovoltage Technique (SPV)
p.149

Study of Oxygen Related Recombination Defects in Si by Temperature-Dependent Lifetime and EBIC Measurements
p.155

Oxygen Precipitate Nucleation Process in Silicon with Different Oxygen Concentration and Structural Perfection
p.161

Initial Stage of Oxygen Precipitation in Silicon
p.167

Oxygen Precipitation in Silicon Thin Layers in the Presence of Carbon
p.171

HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58Analyzing Oxygen Precipitation Using the Surface...

Analyzing Oxygen Precipitation Using the Surface Photovoltage Technique (SPV)

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology VII

Info:

Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

149-154

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.149

Citation:

Cite this paper

Online since:

July 1997

Authors:

P. Moens, W. Dobbelaere, T. Colpaert

Keywords:

Nucleation, Oxygen Defects, Precipitation, Surface Photo Voltage (SPV)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: