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Effect of High Temperature Pre-Anneal on Oxygen Precipitates Nucleation Kinetics in Si
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Vacancy-Assisted Oxygen Precipitation Phenomena in Si
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Mechanism of Slip Dislocation Generation by Oxide Precipitates in Czochralski Silicon Wafers
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State of Oxygen and Growth Conditions
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Analyzing Oxygen Precipitation Using the Surface Photovoltage Technique (SPV)
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HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58Mechanism of Slip Dislocation Generation by Oxide...

Mechanism of Slip Dislocation Generation by Oxide Precipitates in Czochralski Silicon Wafers

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Gettering and Defect Engineering in Semiconductor Technology VII

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Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

137-142

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.137

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Online since:

July 1997

Authors:

Koji Sueoka, M. Akatsuka, H. Katahama, N. Adachi

Keywords:

Czochralski Silicon Wafer, Mechanical Strength, Oxide Precipitates, Precipitate Size, Slip Dislocation, Thermal Stress

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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