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State of Oxygen and Growth Conditions
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Analyzing Oxygen Precipitation Using the Surface Photovoltage Technique (SPV)
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Study of Oxygen Related Recombination Defects in Si by Temperature-Dependent Lifetime and EBIC Measurements
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Oxygen Precipitate Nucleation Process in Silicon with Different Oxygen Concentration and Structural Perfection
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Initial Stage of Oxygen Precipitation in Silicon
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Heterogeneous Precipitation of Silicon Oxide in Silicon at Laser Induced Centres
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HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58Study of Oxygen Related Recombination Defects in...

Study of Oxygen Related Recombination Defects in Si by Temperature-Dependent Lifetime and EBIC Measurements

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Gettering and Defect Engineering in Semiconductor Technology VII

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Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

155-160

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.155

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Online since:

July 1997

Authors:

Eugenijus Gaubas, Jan Vanhellemont, Eddy Simoen, Cor Claeys, Winfried Seifert

Keywords:

Absorption, Carrier Lifetime, DLTS, EBIC, Micro-Wave, Oxygen Related Defects

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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