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HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58Oxygen Precipitate Nucleation Process in Silicon...

Oxygen Precipitate Nucleation Process in Silicon with Different Oxygen Concentration and Structural Perfection

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Gettering and Defect Engineering in Semiconductor Technology VII

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Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

161-166

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.161

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Online since:

July 1997

Authors:

I.V. Antonova, Andrzej Misiuk, V.P. Popov, A.E. Plotnikov, Barbara Surma

Keywords:

Enhanced Pressure, Nucleation, Oxygen Precipitates, Silicon

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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