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Effect of High Temperature Pre-Anneal on Oxygen Precipitates Nucleation Kinetics in Si
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Vacancy-Assisted Oxygen Precipitation Phenomena in Si
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Mechanism of Slip Dislocation Generation by Oxide Precipitates in Czochralski Silicon Wafers
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State of Oxygen and Growth Conditions
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Analyzing Oxygen Precipitation Using the Surface Photovoltage Technique (SPV)
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Study of Oxygen Related Recombination Defects in Si by Temperature-Dependent Lifetime and EBIC Measurements
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Initial Stage of Oxygen Precipitation in Silicon
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HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58State of Oxygen and Growth Conditions

State of Oxygen and Growth Conditions

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Gettering and Defect Engineering in Semiconductor Technology VII

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Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

143-148

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.143

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Online since:

July 1997

Authors:

T.M. Tkacheva, G.N. Petrov

Keywords:

Carbon, Growth Conditions, Heat Treatment, Magnetic Field, MCZ-Si, Optically Active Oxygen Concentration, Total Oxygen Concentration, Vacancy

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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