Paper Titles

Oxygen Gettering on Buried Layers at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon
p.91

Use of Gettering and Defect Induced Processes in Ultra-Thin Buried Oxide Synthesis
p.97

Interaction of Impurities and Dislocations in Silicon before and after External Gettering
p.103

The Influence of Intrinsic Point Defects on Getter Formation in Silicon Wafers
p.109

Comparison of External Gettering Efficiency of Phosphorus Diffusion, Aluminium-Silicon Alloying and Helium Implantation in Silicon Wafers
p.115

Effect of High Temperature Pre-Anneal on Oxygen Precipitates Nucleation Kinetics in Si
p.123

Vacancy-Assisted Oxygen Precipitation Phenomena in Si
p.129

Mechanism of Slip Dislocation Generation by Oxide Precipitates in Czochralski Silicon Wafers
p.137

State of Oxygen and Growth Conditions
p.143

HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58Comparison of External Gettering Efficiency of...

Comparison of External Gettering Efficiency of Phosphorus Diffusion, Aluminium-Silicon Alloying and Helium Implantation in Silicon Wafers

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Gettering and Defect Engineering in Semiconductor Technology VII

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Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

115-122

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.115

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Online since:

July 1997

Authors:

N. Gay, Santo Martinuzzi

Keywords:

Aluminium Silicon Alloy, Gettering, Nanocavities, Nickel Ni, Phosphorus Diffusion, Silicon

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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