Paper Titles

Influence of Size and Density of Oxygen Precipitates of Internal Gettering Efficiency of Iron in Czochralski-Grown Silicon
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A Quantitative Method of Metal Impurities Depth Profiling for Gettering Evaluation in Silicon Wafers
p.81

Oxygen Gettering on Buried Layers at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon
p.91

Use of Gettering and Defect Induced Processes in Ultra-Thin Buried Oxide Synthesis
p.97

Interaction of Impurities and Dislocations in Silicon before and after External Gettering
p.103

The Influence of Intrinsic Point Defects on Getter Formation in Silicon Wafers
p.109

Comparison of External Gettering Efficiency of Phosphorus Diffusion, Aluminium-Silicon Alloying and Helium Implantation in Silicon Wafers
p.115

Effect of High Temperature Pre-Anneal on Oxygen Precipitates Nucleation Kinetics in Si
p.123

Vacancy-Assisted Oxygen Precipitation Phenomena in Si
p.129

HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58Interaction of Impurities and Dislocations in...

Interaction of Impurities and Dislocations in Silicon before and after External Gettering

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Gettering and Defect Engineering in Semiconductor Technology VII

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Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

103-108

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.103

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Online since:

July 1997

Authors:

Isabelle Périchaud, Santo Martinuzzi

Keywords:

Dislocation, Gettering, Impurity, Recombination Strength, Silicon

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Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

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