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Gettering by Voids in Silicon: A Comparison with other Techniques
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Gettering in Advanced Low Temperature Processes
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Metal Gettering by Defective Regions in Carbon-Implanted Silicon
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Metallic Impurity Gettering in MeV Implanted Si
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Influence of Size and Density of Oxygen Precipitates of Internal Gettering Efficiency of Iron in Czochralski-Grown Silicon
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A Quantitative Method of Metal Impurities Depth Profiling for Gettering Evaluation in Silicon Wafers
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Oxygen Gettering on Buried Layers at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon
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Use of Gettering and Defect Induced Processes in Ultra-Thin Buried Oxide Synthesis
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Interaction of Impurities and Dislocations in Silicon before and after External Gettering
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HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58Influence of Size and Density of Oxygen...

Influence of Size and Density of Oxygen Precipitates of Internal Gettering Efficiency of Iron in Czochralski-Grown Silicon

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Gettering and Defect Engineering in Semiconductor Technology VII

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Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

75-80

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.75

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Online since:

July 1997

Authors:

H. Takahashi, Hiroshi Yamada-Kaneta, Masashi Suezawa

Keywords:

CZ-Si, Internal Gettering, Iron, Oxygen Precipitates

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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