Metallic Impurity Gettering in MeV Implanted Si
p.69
p.69
Influence of Size and Density of Oxygen Precipitates of Internal Gettering Efficiency of Iron in Czochralski-Grown Silicon
p.75
p.75
A Quantitative Method of Metal Impurities Depth Profiling for Gettering Evaluation in Silicon Wafers
p.81
p.81
Oxygen Gettering on Buried Layers at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon
p.91
p.91
Use of Gettering and Defect Induced Processes in Ultra-Thin Buried Oxide Synthesis
p.97
p.97
Interaction of Impurities and Dislocations in Silicon before and after External Gettering
p.103
p.103
The Influence of Intrinsic Point Defects on Getter Formation in Silicon Wafers
p.109
p.109
Comparison of External Gettering Efficiency of Phosphorus Diffusion, Aluminium-Silicon Alloying and Helium Implantation in Silicon Wafers
p.115
p.115
Effect of High Temperature Pre-Anneal on Oxygen Precipitates Nucleation Kinetics in Si
p.123
p.123
Use of Gettering and Defect Induced Processes in Ultra-Thin Buried Oxide Synthesis
Abstract:
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Periodical:
Solid State Phenomena (Volumes 57-58)
Pages:
97-102
Citation:
Online since:
July 1997
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© 1997 Trans Tech Publications Ltd. All Rights Reserved
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