Paper Titles

A Quantitative Method of Metal Impurities Depth Profiling for Gettering Evaluation in Silicon Wafers
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Oxygen Gettering on Buried Layers at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon
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Use of Gettering and Defect Induced Processes in Ultra-Thin Buried Oxide Synthesis
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Interaction of Impurities and Dislocations in Silicon before and after External Gettering
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The Influence of Intrinsic Point Defects on Getter Formation in Silicon Wafers
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Comparison of External Gettering Efficiency of Phosphorus Diffusion, Aluminium-Silicon Alloying and Helium Implantation in Silicon Wafers
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Effect of High Temperature Pre-Anneal on Oxygen Precipitates Nucleation Kinetics in Si
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Vacancy-Assisted Oxygen Precipitation Phenomena in Si
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Mechanism of Slip Dislocation Generation by Oxide Precipitates in Czochralski Silicon Wafers
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HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58The Influence of Intrinsic Point Defects on Getter...

The Influence of Intrinsic Point Defects on Getter Formation in Silicon Wafers

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Gettering and Defect Engineering in Semiconductor Technology VII

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Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

109-114

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.109

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Online since:

July 1997

Authors:

M.G. Mil'vidskii, Vladimir V. Voronkov, K.L. Enisherlova, V.Ja. Reznick

Keywords:

Internal Getter, Oxygen Precipitation, Self-Interstitial

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Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

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