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The Influence of Intrinsic Point Defects on Getter Formation in Silicon Wafers
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Comparison of External Gettering Efficiency of Phosphorus Diffusion, Aluminium-Silicon Alloying and Helium Implantation in Silicon Wafers
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Effect of High Temperature Pre-Anneal on Oxygen Precipitates Nucleation Kinetics in Si
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Vacancy-Assisted Oxygen Precipitation Phenomena in Si
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Mechanism of Slip Dislocation Generation by Oxide Precipitates in Czochralski Silicon Wafers
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State of Oxygen and Growth Conditions
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Analyzing Oxygen Precipitation Using the Surface Photovoltage Technique (SPV)
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Study of Oxygen Related Recombination Defects in Si by Temperature-Dependent Lifetime and EBIC Measurements
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HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58Vacancy-Assisted Oxygen Precipitation Phenomena in...

Vacancy-Assisted Oxygen Precipitation Phenomena in Si

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Gettering and Defect Engineering in Semiconductor Technology VII

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Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

129-136

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.129

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Online since:

July 1997

Authors:

Robert J. Falster, M. Pagani, D. Gambaro, M. Cornara, M. Olmo, G. Ferrero, P. Pichler, M. Jacob

Keywords:

Nucleation, Oxygen, Rapid Thermal Annealing (RTA), Vacancy

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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