Oxygen Gettering on Buried Layers at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon

Abstract:

Article Preview

Info:

Periodical:

Solid State Phenomena (Volumes 57-58)

Edited by:

C. Claeys, J. Vanhellemont, H. Richter and M. Kittler

Pages:

91-96

DOI:

10.4028/www.scientific.net/SSP.57-58.91

Citation:

R. Job et al., "Oxygen Gettering on Buried Layers at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon", Solid State Phenomena, Vols. 57-58, pp. 91-96, 1997

Online since:

July 1997

Export:

Price:

$35.00

In order to see related information, you need to Login.