Paper Titles

Metal Gettering by Defective Regions in Carbon-Implanted Silicon
p.63

Metallic Impurity Gettering in MeV Implanted Si
p.69

Influence of Size and Density of Oxygen Precipitates of Internal Gettering Efficiency of Iron in Czochralski-Grown Silicon
p.75

A Quantitative Method of Metal Impurities Depth Profiling for Gettering Evaluation in Silicon Wafers
p.81

Oxygen Gettering on Buried Layers at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon
p.91

Use of Gettering and Defect Induced Processes in Ultra-Thin Buried Oxide Synthesis
p.97

Interaction of Impurities and Dislocations in Silicon before and after External Gettering
p.103

The Influence of Intrinsic Point Defects on Getter Formation in Silicon Wafers
p.109

Comparison of External Gettering Efficiency of Phosphorus Diffusion, Aluminium-Silicon Alloying and Helium Implantation in Silicon Wafers
p.115

HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58Oxygen Gettering on Buried Layers at...

Oxygen Gettering on Buried Layers at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology VII

Info:

Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

91-96

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.91

Citation:

Cite this paper

Online since:

July 1997

Authors:

Reinhart Job, Wolfgang R. Fahrner, Alexander G. Ulyashin, Yu.A. Bumay, A.I. Ivanov, L. Palmetshofer

Keywords:

Hydrogen Implantation in Silicon, Oxygen in Silicon, Oxygen Precipitates, Thermal Donor

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: