Paper Titles

Gettering in Advanced Low Temperature Processes
p.53

Metal Gettering by Defective Regions in Carbon-Implanted Silicon
p.63

Metallic Impurity Gettering in MeV Implanted Si
p.69

Influence of Size and Density of Oxygen Precipitates of Internal Gettering Efficiency of Iron in Czochralski-Grown Silicon
p.75

A Quantitative Method of Metal Impurities Depth Profiling for Gettering Evaluation in Silicon Wafers
p.81

Oxygen Gettering on Buried Layers at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon
p.91

Use of Gettering and Defect Induced Processes in Ultra-Thin Buried Oxide Synthesis
p.97

Interaction of Impurities and Dislocations in Silicon before and after External Gettering
p.103

The Influence of Intrinsic Point Defects on Getter Formation in Silicon Wafers
p.109

HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58A Quantitative Method of Metal Impurities Depth...

A Quantitative Method of Metal Impurities Depth Profiling for Gettering Evaluation in Silicon Wafers

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Gettering and Defect Engineering in Semiconductor Technology VII

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Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

81-90

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.81

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Online since:

July 1997

Authors:

Mohammad B. Shabani, T. Yoshimi, S. Okuuchi, A. Kaniava

Keywords:

AAS, Bulk Decomposition, Depth-Profiling, Drop Etching, Drop Sandwich Etching, External Gettering, Gettering Evaluation, Internal Gettering, p/p+ epi, SIMOX

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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