A Quantitative Method of Metal Impurities Depth Profiling for Gettering Evaluation in Silicon Wafers

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Periodical:

Solid State Phenomena (Volumes 57-58)

Edited by:

C. Claeys, J. Vanhellemont, H. Richter and M. Kittler

Pages:

81-90

DOI:

10.4028/www.scientific.net/SSP.57-58.81

Citation:

M. B. Shabani et al., "A Quantitative Method of Metal Impurities Depth Profiling for Gettering Evaluation in Silicon Wafers", Solid State Phenomena, Vols. 57-58, pp. 81-90, 1997

Online since:

July 1997

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Price:

$35.00

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