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Gettering by Voids in Silicon: A Comparison with other Techniques
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Gettering in Advanced Low Temperature Processes
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Metal Gettering by Defective Regions in Carbon-Implanted Silicon
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Metallic Impurity Gettering in MeV Implanted Si
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Influence of Size and Density of Oxygen Precipitates of Internal Gettering Efficiency of Iron in Czochralski-Grown Silicon
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A Quantitative Method of Metal Impurities Depth Profiling for Gettering Evaluation in Silicon Wafers
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HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58Gettering in Advanced Low Temperature Processes

Gettering in Advanced Low Temperature Processes

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Gettering and Defect Engineering in Semiconductor Technology VII

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Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

53-62

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.53

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Online since:

July 1997

Authors:

S. Sadamitsu, S. Ogushi, Y. Koike, N. Reilly, T. Nagashima, Mizuka Sano, H. Tsuya

Keywords:

Epitaxial Wafers, Gettering, Low Temperature Process, Metal Impurity, Silicon

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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