Paper Titles

Silicon Wafer Technology: The Challenges towards the Gigabit Era
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Hydrogen Annealed Silicon Wafer
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Formation of Microscopic Distribution of Grown-In Defects in Czochralski Silicon Crystal
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CZ Crystal Growth Development in Super Silicon Crystal Project
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Gettering by Voids in Silicon: A Comparison with other Techniques
p.43

Gettering in Advanced Low Temperature Processes
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Metal Gettering by Defective Regions in Carbon-Implanted Silicon
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Metallic Impurity Gettering in MeV Implanted Si
p.69

Influence of Size and Density of Oxygen Precipitates of Internal Gettering Efficiency of Iron in Czochralski-Grown Silicon
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HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58Gettering by Voids in Silicon: A Comparison with...

Gettering by Voids in Silicon: A Comparison with other Techniques

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Gettering and Defect Engineering in Semiconductor Technology VII

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Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

43-52

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.43

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Online since:

July 1997

Authors:

Vito Raineri

Keywords:

Gettering, Metal Impurity, Silicon, Void

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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