Gettering by Voids in Silicon: A Comparison with other Techniques

Abstract:

Article Preview

Info:

Periodical:

Solid State Phenomena (Volumes 57-58)

Edited by:

C. Claeys, J. Vanhellemont, H. Richter and M. Kittler

Pages:

43-52

DOI:

10.4028/www.scientific.net/SSP.57-58.43

Citation:

V. Raineri "Gettering by Voids in Silicon: A Comparison with other Techniques", Solid State Phenomena, Vols. 57-58, pp. 43-52, 1997

Online since:

July 1997

Authors:

Export:

Price:

$35.00

In order to see related information, you need to Login.