An IR Study of the Annealing Behaviour of A-Center in Silicon

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Periodical:

Solid State Phenomena (Volumes 57-58)

Edited by:

C. Claeys, J. Vanhellemont, H. Richter and M. Kittler

Pages:

245-250

DOI:

10.4028/www.scientific.net/SSP.57-58.245

Citation:

C. A. Londos et al., "An IR Study of the Annealing Behaviour of A-Center in Silicon", Solid State Phenomena, Vols. 57-58, pp. 245-250, 1997

Online since:

July 1997

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Price:

$35.00

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