Paper Titles

Radiation Induced Defects InGaAs Photodiodes by 1-MeV Fast Neutrons
p.213

Defect Engineering Radiation Tolerant Silicon Detectors
p.221

Microscopic Studies of Radiation Damage-Induced Defects Responsible for the Deterioration of High-Resistivity Silicon Detectors
p.233

Lattice Defects in Si_1-xGe_x Devices by Proton Irradiation and their Effect on Device Performance
p.239

An IR Study of the Annealing Behaviour of A-Center in Silicon
p.245

Lifetime Considerations for High-Energy Proton Irradiated Si p-n Junction Diodes
p.251

Defect Formation during Erbium Implantation and Subsequent Annealing of Si:Er
p.257

Alpha-Particle Irradiation Induced Defects in Metal-Oxide-Semiconductor Silicon Transistor
p.263

The Change of Au-ZnS and Au-CdS Diode Structure Parameters Caused by Low-Dose X-Ray Irradiation
p.269

HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58An IR Study of the Annealing Behaviour of A-Center...

An IR Study of the Annealing Behaviour of A-Center in Silicon

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology VII

Info:

Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

245-250

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.245

Citation:

Cite this paper

Online since:

July 1997

Authors:

Charalamos A. Londos, N.V. Sarlis, L.G. Fytros

Keywords:

A-Center, Annealing Studies, Infrared, Neutron Irradiation, Silicon

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: