The Change of Au-ZnS and Au-CdS Diode Structure Parameters Caused by Low-Dose X-Ray Irradiation
p.269
p.269
Critical Resolved Shear Stress for a Dislocation Loop Growth, Stability and Retrogrowth in Silicon: Application to the 16 MEG DRAM
p.275
p.275
Modification of the Recombination Activity of Dislocations in Silicon by Hydrogenation, Phosphorous Diffusion and Heat Treatments
p.287
p.287
Influence of Electric Field-Enhanced Emission on Deep Level Transient Spectra of Bandlike Extended Defects: NiSi2-Precipitates in Silicon
p.293
p.293
The Effect of Dislocation Dissociation on the g-Tensor of Holes in Dislocation Related 1D Energy Band in Si
p.299
p.299
Influence of the Surface Metal Spraying on the Dislocation Detachment Process in Silicon Crystals
p.305
p.305
The Magnesium Related Luminescence in Silicon and its Quenching due to the Presence of Dislocations
p.313
p.313
Deformation Interaction of Defects in Crystal: Concept of Evaluation
p.319
p.319
Yield Analysis of CMOS Ics
p.327
p.327
The Effect of Dislocation Dissociation on the g-Tensor of Holes in Dislocation Related 1D Energy Band in Si
Abstract:
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Periodical:
Solid State Phenomena (Volumes 57-58)
Pages:
299-304
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Online since:
July 1997
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© 1997 Trans Tech Publications Ltd. All Rights Reserved
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