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Deformation Interaction of Defects in Crystal: Concept of Evaluation
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Yield Analysis of CMOS Ics
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The Role of Grown-in Defects in Advanced Silicon Technology
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Point Defect and Microdefect Dynamics in Czochralski-Grown Silicon: Simulations and Analysis of Self-Consistent Models
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HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58Yield Analysis of CMOS Ics

Yield Analysis of CMOS Ics

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Gettering and Defect Engineering in Semiconductor Technology VII

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Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

327-336

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.327

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Online since:

July 1997

Authors:

D. Schmitt-Landsiedel

Keywords:

Critical Area, Defect Density, Failure Analysis, Low Voltage CMOS, Manufacturability, Matching, Parameter Variation, Yield

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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