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HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58The Role of Grown-in Defects in Advanced Silicon...

The Role of Grown-in Defects in Advanced Silicon Technology

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Gettering and Defect Engineering in Semiconductor Technology VII

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Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

337-342

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.337

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Online since:

July 1997

Authors:

G. Kissinger, D. Gräf, Jan Vanhellemont, U. Lambert, Hans Richter

Keywords:

CMOS Process, Grown-in Defects, Oxide Precipitate Nuclei, Oxygen Precipitation

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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