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Point Defect and Microdefect Dynamics in Czochralski-Grown Silicon: Simulations and Analysis of Self-Consistent Models
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Observation of Vacancy Enhancement during Rapid Thermal Annealing in Nitrogen
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Strain and Gettering in Epitaxial Silicon Wafers
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Strain in Silicon below Si₃N₄ Stripes, Comparison between SUPREM IV Calculation and TEM/CBED Measurements
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Defects Produced in Silicon by Reactive Ion Etching
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Depth Dependence of Dislocation Loop Dissolution Kinetics in Ion Implanted Silicon
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Hydrogen Stimulated Destruction of Fe-B Pairs in p-Si
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Differential Interference Contrast Microscopy of Defects in As-Grown and Annealed Si Wafers
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HomeSolid State PhenomenaSolid State Phenomena Vols. 57-58Strain in Silicon below Si3N4 Stripes, Comparison...

Strain in Silicon below Si₃N₄ Stripes, Comparison between SUPREM IV Calculation and TEM/CBED Measurements

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Gettering and Defect Engineering in Semiconductor Technology VII

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Periodical:

Solid State Phenomena (Volumes 57-58)

Pages:

365-370

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.57-58.365

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Online since:

July 1997

Authors:

Aldo Armigliato, R. Balboni, S. Frabboni, A. Tixier, G.P. Carnevale, P. Colpani, A. Marmiroli

Keywords:

Electron Diffraction (ED), Process Simulation, Strain, Stress

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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